Tuesday, January 22, 2013

IRF540N MOSFET Specifications, Datasheet Explained

The IRF540N is an advanced HEXFET N-channel power mosfet, from International Rectifier. The device is extremely versatile with its performance capabilities and thus becomes ideal for numerous electronic applications. The datasheet and pin out details of the device has been explained in the following article.


Main Features:

Sophisticated, cutting-edge processing technology used.
Extremely low resistance across load path.
Flexible dv/dt plot.
Operating temperature tolerance capacity as high as 175 degrees Celsius.
Very fast switching capability.
Fully resistant against avalanche or peak surge currents.



Maximum Absolute Ratings (maximum tolerable limits of IRF540N) are stated as under:

ID = 33 Amps Max at 10V (VGS), It’s the maximum current handling capacity of the device across the drain to the source, via the load, with gate voltage  at 10V, at normal temperatures (25 to 35 degrees Cel.)

IDM = 110 Amps Max, It’s the maximum current handling capacity of the device across the drain to the source, via the load, in a pulsed mode (NOT continuous).

PD = 130 Watts Max, The maximum power the FET can dissipate with and infinite (cool) heat sink

VGS = 10 Volts typical +/-20%. It’s the maximum trigger voltage that may be applied across the gate and the source for optimal performance.

V(BR)DSS= 100 volts, It’s the maximum voltage that may be applied across drain to source of the device.



Applications Areas

This device is best suited for high power DC switching applications, such as in high current SMPS power supplies, compact ferrite inverter circuits, iron core inverter circuits, buck and boost converters, power amplifiers, motor sped controllers, robotics etc.

How to Use or Connect IRF540N MOSFET in an electronic circuit.

It’s quite simple, and must be done as explained in the following points:

  • The source should be preferably connected to the ground or the negative line of the supply.
  • The drain should be connected to the positive terminal of the supply via the load which needs to be operated by the device.
  • Finally, the gate which is the trigger lead of the device should be connected to the trigger point of the circuit, this trigger input should be preferably a +5V supply from a CMOS logic source.
  • If the trigger input is not a logic source make sure the gate is permanently connected to ground via a high value resistor.
  • When the device is being used for switching inductive loads like a transformer or a motor, a flyback diode should be normally connected across the load, with the cathode of the diode connected to the positive side of the load. However, the IRF540N has a built in avalanche protective diode, therefore typically an external diode may not be required; it may be incorporated in case yu wish to provide extra safety to the device.

Corrections to the above explanations is welcome.



7 comments:

  1. Good Info. on MOSFET.

    Thank you,
    Regards,
    Pravpa

    ReplyDelete
  2. sir , it is given that pd = 130w max , so at vds=24v if the current ids is 33a then power = 24 * 33 =792w ??? so safe ids is 130/24 = 5.41a , is it right ??

    ReplyDelete
    Replies
    1. pd = power dissipation in the form of heat, it's not power handling capacity.

      when Id is shown 33amps that means it would be able to handle 33amps upto 100V

      Delete
    2. ok sir.. but if a mosfet can hold 33 amps , what is the need of connecting more mosfets in parallel?? in a 24 v invetrer 33*24*2=1.5kw , so upto 1.5kw we can use only 1 mosfet?? when i used single mosfet when i put a tv mosfet burnt off , why so sir??

      Delete
    3. yes there's no need to put more in parallel but be careful with the heat dissipation, use very large finned type heatsinks and probably a fan to cool it.

      33 is it's last limit so better use upto 30amps only.

      Delete
    4. ok... i have used 3 * 2 mosfets for my 200va modified sine wave inveter..

      Delete

Readers are requested not to include external links while commenting. For consulting a diagram, upload it on Google Drive and provide the link here.

Readers are advised to proceed with the construction of the presented circuits only after understanding the concepts from the core. Not adhering to this can lead to failures and frustrations.